منابع مشابه
AlN avalanche photodetectors
Deep ultraviolet DUV avalanche photodetectors APDs based on an AlN /n-SiC Schottky diode structure have been demonstrated. The device with a mesa diameter of 100 m exhibits a gain of 1200 at a reverse bias voltage of −250 V or a field of about 3 MV /cm. The cut-off and peak responsivity wavelengths of these APDs were 210 and 200 nm, respectively. This is the highest optical gain and shortest cu...
متن کاملHigh quality AlN for deep UV photodetectors
S. Nikishin, B. Borisov, M. Pandikunta, R. Dahal, J. Y. Lin, H. X. Jiang, H. Harris, and M. Holtz Department of Electrical and Computer Engineering and Nano Tech Center, Texas Tech University, Lubbock, Texas 79409, USA Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA Department of Physics and Nano Tech Center, Texas Tech University, Lubb...
متن کاملElectrothermal simulation of superconducting nanowire avalanche photodetectors
Electro-thermal simulation of superconducting nanowire avalanche photodetectors Francesco Marsili, Faraz Najafi, Charles Herder, Karl K. Berggren Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft,...
متن کاملTiming performance of 30-nm-wide superconducting nanowire avalanche photodetectors
We investigated the timing jitter of superconducting nanowire avalanche photodetectors (SNAPs, also referred to as cascade-switching superconducting single-photon detectors) based on 30-nm-wide nanowires. At bias currents (IB) near the switching current, SNAPs showed sub-35-ps FWHM Gaussian jitter similar to standard 100-nm-wide superconducting nanowire single-photon detectors. At lower values ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2007
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2823588